Kuan Eng Johnson Goh Group
Kuan Eng Johnson Goh is Senior Principal Scientist at the Agency for Science, Technology and Research (A*STAR). He is Adjunct Professor at both the School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, and Department of Physics, National University of Singapore. He is adjunct Distinguished Member of Technical Staff of the Defence Science Organisation (DSO). He also serves as the Director of the Quantum Engineering Programme funded by the National Research Foundation, Singapore. He holds a PhD in Physics (2007) from the University of New South Wales, Australia; his current research interests are in solid-state technologies for quantum computation, valleytronics and quantum effect devices.
Principal Investigator
Centre for Quantum Technologies
Senior Principal Scientist
A*STAR
Director
Quantum Engineering Programme, National Quantum Office
Adjunct Professor
National University of Singapore and Nanyang Technological University, Singapore
Distinguished Member of Technical Staff
DSO
Kuan Eng Johnson Goh Group
My research team focuses on the experimental realisation of solid-state qubits hosted in low-dimensional material systems, e.g. 2D semiconductors, 2DEG (2D electron gas), etc. A critical bottleneck is the lack of high-quality materials for reproducible production of reliable qubits. My team is therefore invested in achieving the necessary “quantum-grade” material needed in order to reduce the significant wastage caused by low device yields due to material quality issues. Our ultimate goal is in achieving reproducible and reliable spin-based qubits in solid-state systems.
Recent papers
Uncovering Semiconductor Band Structure Effects in Au/n-WS2 Schottky Devices Using Ballistic Electron Emission Microscopy
Low-Temperature Contacts and the Coulomb Blockade Effect in Layered Nanoribbons with In-Plane Anisotropy
Propensity of oxidation of transition metal dichalcogenide monolayers in relation to physical configuration of chalcogen vacancies
Influence of Substrate Defects on the Electronic Properties of the WS2 Monolayer/Highly Oriented Pyrolytic Graphite Heterostructure
Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS
